Quantum dots in the strong confinement regime: a model system for gain in quasi-zero-dimensional semiconductors

Harald W. Giessen; Ulrike Woggon; Brian Fluegel; Georg Mohs; Yuan Zheng Hu; Stephan W. Koch; Nasser Peyghambarian

doi:10.1117/12.238959

1 May 1996 Quantum dots in the strong confinement regime: a model system for gain in quasi-zero-dimensional semiconductors

Harald W. Giessen, Ulrike Woggon, Brian Fluegel, Georg Mohs, Yuan Zheng Hu, Stephan W. Koch, Nasser Peyghambarian

Author Affiliations +

Proceedings Volume 2693, Physics and Simulation of Optoelectronic Devices IV; (1996) https://doi.org/10.1117/12.238959
Event: Photonics West '96, 1996, San Jose, CA, United States

Abstract

We present a model for gain in a quasi zero-dimensional quantum confined semiconductor system. Due to a multitude of one-electron-hole pair and two-electron-hole pair transitions, the gain region is broad, quasi-continuous and stretches below the absorption edge. Femtosecond experiments in the gain region of strongly confined CdSe quantum dots confirm our theoretical predictions.

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Harald W. Giessen, Ulrike Woggon, Brian Fluegel, Georg Mohs, Yuan Zheng Hu, Stephan W. Koch, and Nasser Peyghambarian "Quantum dots in the strong confinement regime: a model system for gain in quasi-zero-dimensional semiconductors", Proc. SPIE 2693, Physics and Simulation of Optoelectronic Devices IV, (1 May 1996); https://doi.org/10.1117/12.238959

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