Paper
25 March 1996 Absorption and luminescence of Cr3+-doped solid solutions of gallium-indium oxides
V. I. Vasyltsiv, Y. I. Rym, Y. M. Zakharko
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Abstract
Optical absorption, luminescence, kinetics of decay and temperature dependence of luminescence characteristic of Cr3+-doped solid-solutions of gallium and indium oxides were investigated. The single crystals of J3-Ga2-xinx03 solid-solution x=(0-0,2) were grown by floating zone technique using radiation heating. If x increases from 0 to 0,2, interionic distances 0-Ga of gallium octahedron and tetrahedron increase on the average of 1-1,5 % and, as consequence, the position of steep absorption edge of band-to-band electron transitions shifts towards smaller energies approximately by 0,3 eV. Simultaneously the changes of luminescence spectral compositions and luminescence lifetime shortening are observed. When the indium content increases, the R-lines luminescence decreases, but the wide band luminescence from 4T2 levels of Cr3+ -ion increases. The influence of indium oxide concentration on emission, temperature quenching and shortening of luminescence lifetime is interpreted by mutual approaching of 2E and 4T2 levels of Cr3+ -ions. Keywords: oxide, solid-solution, crystal growth, optical properties, absorption, luminescence, kinetics of decay, Cr3+-doped crystals
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
V. I. Vasyltsiv, Y. I. Rym, and Y. M. Zakharko "Absorption and luminescence of Cr3+-doped solid solutions of gallium-indium oxides", Proc. SPIE 2698, Solid State Lasers V, (25 March 1996); https://doi.org/10.1117/12.236165
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Cited by 5 scholarly publications.
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KEYWORDS
Absorption

Luminescence

Oxides

Solids

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