Optical characterization of ITO films used in flat panel displays

A. Rahim Forouhi; George G. Li; Iris Bloomer

doi:10.1117/12.240104

21 May 1996 Optical characterization of ITO films used in flat panel displays

A. Rahim Forouhi, George G. Li, Iris Bloomer

Proceedings Volume 2725, Metrology, Inspection, and Process Control for Microlithography X; (1996) https://doi.org/10.1117/12.240104
Event: SPIE's 1996 International Symposium on Microlithography, 1996, Santa Clara, CA, United States

Abstract

A new technique is presented that simultaneously and unambiguously determines thickness, index of refraction, (n), and extinction coefficient, (k), as well as energy bandgap of indium tin oxide (ITO) films deposited on either transparent substrates such as quartz or opaque substrates such as silicon. The quantities n and k are determined as a function of wavelength, (lambda) , covering deep UV through near IR wavelengths (from 190 to 900 nm). These quantities can then be correlated to transparency, conductivity, etchability, patternability and manufacturability of ITO.

Citation Download Citation

A. Rahim Forouhi, George G. Li, and Iris Bloomer "Optical characterization of ITO films used in flat panel displays", Proc. SPIE 2725, Metrology, Inspection, and Process Control for Microlithography X, (21 May 1996); https://doi.org/10.1117/12.240104

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