Resist metrology for lithography simulation, part I: exposure parameter measurements

Chris A. Mack; Toshiharu Matsuzawa; Atsushi Sekiguchi; Youichi Minami

doi:10.1117/12.240109

21 May 1996 Resist metrology for lithography simulation, part I: exposure parameter measurements

Chris A. Mack, Toshiharu Matsuzawa, Atsushi Sekiguchi, Youichi Minami

Proceedings Volume 2725, Metrology, Inspection, and Process Control for Microlithography X; (1996) https://doi.org/10.1117/12.240109
Event: SPIE's 1996 International Symposium on Microlithography, 1996, Santa Clara, CA, United States

Abstract

The experimental measurement of the photoresist ABC modeling parameters is described and three different data analysis techniques are compared. The best technique, the use of full exposure simulation to fit the data, is shown to be more accurate than the conventional data analysis method over a wide variety of typical substrates. In particular, artificial swing curve like behavior is observed on non-ideal substrates using the standard data analysis, but is readily accounted for in the more accurate full simulation method.

Citation Download Citation

Chris A. Mack, Toshiharu Matsuzawa, Atsushi Sekiguchi, and Youichi Minami "Resist metrology for lithography simulation, part I: exposure parameter measurements", Proc. SPIE 2725, Metrology, Inspection, and Process Control for Microlithography X, (21 May 1996); https://doi.org/10.1117/12.240109

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