SEM characterization of etch and develop contributions to poly-CD error

Crid Yu; Anna Maria Minvielle; Costas J. Spanos

doi:10.1117/12.240081

21 May 1996 SEM characterization of etch and develop contributions to poly-CD error

Crid Yu, Anna Maria Minvielle, Costas J. Spanos

Proceedings Volume 2725, Metrology, Inspection, and Process Control for Microlithography X; (1996) https://doi.org/10.1117/12.240081
Event: SPIE's 1996 International Symposium on Microlithography, 1996, Santa Clara, CA, United States

Abstract

CD variability is usually managed using an error budget, which apportions the total allowable error into individual process components. Automated SEM metrology can provide high quantities of samples at intermediate points in a process sequence and can be used to estimate error budget items. However, evidence suggests that SEM CD measurements can be tainted by sequencing artifacts such as trend and autocorrelation. A methodology is developed to characterize the CD variability introduced by automated SEM measurements and remove them through statistical filtering. This technique is applied to estimate variability after resist development.

Citation Download Citation

Crid Yu, Anna Maria Minvielle, and Costas J. Spanos "SEM characterization of etch and develop contributions to poly-CD error", Proc. SPIE 2725, Metrology, Inspection, and Process Control for Microlithography X, (21 May 1996); https://doi.org/10.1117/12.240081

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