Optical proximity correction of bit line pattern in DRAM devices

Yongbeom Kim; Chang-Jin Sohn; Hoyoung Kang; Woo-Sung Han; Young-Bum Koh

doi:10.1117/12.240949

7 June 1996 Optical proximity correction of bit line pattern in DRAM devices

Yongbeom Kim, Chang-Jin Sohn, Hoyoung Kang, Woo-Sung Han, Young-Bum Koh

Proceedings Volume 2726, Optical Microlithography IX; (1996) https://doi.org/10.1117/12.240949
Event: SPIE's 1996 International Symposium on Microlithography, 1996, Santa Clara, CA, United States

Abstract

In the bit line patterns of high density DRAM, there has not been enough to process latitude because of the optical proximity effect. To correct this problem, we suggest TCM (transmittance controlled mask) as a sort of optical proximity correction which has the same pattern of mask with the controlled transmittance. The parameters of established mask including transmittance and bulge size were decided by simulation. After evaluating the aerial image measurement system, wafer was evaluated to exposure tool with i-line exposure source. As a result, application of TCM can improve the overlay margin more than normal mask and DOF with 0.4micrometers as compared with normal mask.

Citation Download Citation

Yongbeom Kim, Chang-Jin Sohn, Hoyoung Kang, Woo-Sung Han, and Young-Bum Koh "Optical proximity correction of bit line pattern in DRAM devices", Proc. SPIE 2726, Optical Microlithography IX, (7 June 1996); https://doi.org/10.1117/12.240949

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