Intensity squeezing in semiconductor lasers

Tiancai Zhang

doi:10.1117/12.2316103

1 September 1996 Intensity squeezing in semiconductor lasers

Tiancai Zhang

Proceedings Volume 2778, 17th Congress of the International Commission for Optics: Optics for Science and New Technology; 2778BI (1996) https://doi.org/10.1117/12.2316103
Event: 17th Congress of the International Commission for Optics: Optics for Science and New Technology, 1996, Taejon, Korea, Republic of

Abstract

Intensity squeezing is generated in single mode semiconductor laser by weak external mirror feedback. The measurable squeezing is 4.7%, corresponding to 9% below the SNL after correction for transmission and detection efficiency. It proves that intensity squeezing can be obtained at room temperature without line-narrowing techniques.

Citation Download Citation

Tiancai Zhang "Intensity squeezing in semiconductor lasers", Proc. SPIE 2778, 17th Congress of the International Commission for Optics: Optics for Science and New Technology, 2778BI (1 September 1996); https://doi.org/10.1117/12.2316103

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