DLTS study in GaAs1-xSbx

Ewa Placzek-Popko; Jan Szatkowski; A. Hajdusianek; Ewa Beata Radojewska

doi:10.1117/12.238145

8 April 1996 DLTS study in GaAs_1-xSb_x

Ewa Placzek-Popko, Jan Szatkowski, A. Hajdusianek, Ewa Beata Radojewska

Proceedings Volume 2780, Metal/Nonmetal Microsystems: Physics, Technology, and Applications; (1996) https://doi.org/10.1117/12.238145
Event: Metal/Nonmetal Microsystems: Physics, Technology, and Applications, 1995, Polanica Zdroj, Poland

Abstract

In the present paper we have shown the results of our DLTS studies in GaAs_0.945Sb_0.055 LPE semiconducting compound. Only one electron trap has been detected within whole experimental temperature range 80 K - 300 K. The concentration of the trap was found to be of the order of 10¹² cm^-3within the whole barrier region of the junction. The trap behaves very different from the usually observed traps in DLTS experiment. The DLTS peak is asymmetrically broadened and shifts to lower temperatures with increasing width of filling pulse which implies that dislocations are the origin of the trap.

Citation Download Citation

Ewa Placzek-Popko, Jan Szatkowski, A. Hajdusianek, and Ewa Beata Radojewska "DLTS study in GaAs_1-xSb_x", Proc. SPIE 2780, Metal/Nonmetal Microsystems: Physics, Technology, and Applications, (8 April 1996); https://doi.org/10.1117/12.238145

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