Electrically active defects in Ni-contaminated Cz-Si with oxygen precipitates

Pawel Kaminski; Roman Kozlowski; Andrzej Misiuk

doi:10.1117/12.238141

8 April 1996 Electrically active defects in Ni-contaminated Cz-Si with oxygen precipitates

Pawel Kaminski, Roman Kozlowski, Andrzej Misiuk

Proceedings Volume 2780, Metal/Nonmetal Microsystems: Physics, Technology, and Applications; (1996) https://doi.org/10.1117/12.238141
Event: Metal/Nonmetal Microsystems: Physics, Technology, and Applications, 1995, Polanica Zdroj, Poland

Abstract

Electrically active defects in preannealed n-type Cz-Si crystals subjected to high-pressure heat treatment were studied by deep level transient spectroscopy (DLTS). Experimental evidence is given that electron traps at E_c - 0.20 eV, E_c - 0.45 eV and E_c - 0.62 eV are presumably related to an oxygen-multivacancy complex, an acceptor level of Ni and a point defect decorating extended defects, respectively.

Citation Download Citation

Pawel Kaminski, Roman Kozlowski, and Andrzej Misiuk "Electrically active defects in Ni-contaminated Cz-Si with oxygen precipitates", Proc. SPIE 2780, Metal/Nonmetal Microsystems: Physics, Technology, and Applications, (8 April 1996); https://doi.org/10.1117/12.238141

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