Paper
8 April 1996 FTIR study of oxygen precipitation in high-pressure-treated Cz-Si contaminated by transition metals
B. Surma, Andrzej Misiuk, Malgorzata Mozdzonek, Juergen Hartwig, E. Prieur
Author Affiliations +
Proceedings Volume 2780, Metal/Nonmetal Microsystems: Physics, Technology, and Applications; (1996) https://doi.org/10.1117/12.238147
Event: Metal/Nonmetal Microsystems: Physics, Technology, and Applications, 1995, Polanica Zdroj, Poland
Abstract
The influence of metallic contaminants (Ni, Mo) on the oxygen precipitation process during high temperature (HT) treatment under hydrostatic pressure (HP) was studied. No significant influence of Ni and Mo contaminants on the oxygen precipitation process at 1400 K was observed. Changes of interstitial oxygen concentrations c0 after HP-HT treatment for contaminated and for non-contaminated samples were less than 10%. The metallic contaminants (ni, Mo) cause mostly generation of large strain fields in the matrix probably related to metallic precipitates as evidenced by x-ray topography.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
B. Surma, Andrzej Misiuk, Malgorzata Mozdzonek, Juergen Hartwig, and E. Prieur "FTIR study of oxygen precipitation in high-pressure-treated Cz-Si contaminated by transition metals", Proc. SPIE 2780, Metal/Nonmetal Microsystems: Physics, Technology, and Applications, (8 April 1996); https://doi.org/10.1117/12.238147
Lens.org Logo
CITATIONS
Cited by 2 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
Back to Top