Numerical studies of quantum dot electrical transport properties

Stanislaw Pawlowski; Andrzej Kusy; Roman Sikora; Mariusz Maczka; Elzbieta Machowska-Podsiadlo

doi:10.1117/12.238154

8 April 1996 Numerical studies of quantum dot electrical transport properties

Stanislaw Pawlowski, Andrzej Kusy, Roman Sikora, Mariusz Maczka, Elzbieta Machowska-Podsiadlo

Proceedings Volume 2780, Metal/Nonmetal Microsystems: Physics, Technology, and Applications; (1996) https://doi.org/10.1117/12.238154
Event: Metal/Nonmetal Microsystems: Physics, Technology, and Applications, 1995, Polanica Zdroj, Poland

Abstract

A model of controlled-barrier quantum dot based on GaAs/AlGaAs heterostructure has been considered. The analytic form of potential V(x,y) confining the 2DEG has been assumed. It results from application of two biasing voltages: bottom gate U_g and upper electrode U_b. Schrodinger equation for the model has been solved and on this basis transmission coefficient (T) vs electron energy has been calculated for different values of drain to source voltage. Resonance tunneling results in T equals 1 for eigen values of energy within the quantum well. When U_ds increases T decreases below one and shifting of the peaks into the higher energies takes place. Abrupt changes of drain current and peaks in dynamic conductance both versus U_ds have also been found for zero temperature. When temperature increases the smearing of steps in the current and broadening of conductance peaks have been observed.

Citation Download Citation

Stanislaw Pawlowski, Andrzej Kusy, Roman Sikora, Mariusz Maczka, and Elzbieta Machowska-Podsiadlo "Numerical studies of quantum dot electrical transport properties", Proc. SPIE 2780, Metal/Nonmetal Microsystems: Physics, Technology, and Applications, (8 April 1996); https://doi.org/10.1117/12.238154

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