Single-shot excimer laser annealing of PECVD amorphous silicon

Pierre Boher; Dorian Zahorski; Sylvie Prochasson; Bruno Godard; Jean-Louis P. Stehle; Y. Suzuki; Akira Iwasaki

doi:10.1117/12.246244

16 August 1996 Single-shot excimer laser annealing of PECVD amorphous silicon

Pierre Boher, Dorian Zahorski, Sylvie Prochasson, Bruno Godard, Jean-Louis P. Stehle, Y. Suzuki, Akira Iwasaki

Author Affiliations +

Proceedings Volume 2873, International Symposium on Polarization Analysis and Applications to Device Technology; (1996) https://doi.org/10.1117/12.246244
Event: International Symposium on Polarization Analysis and Applications to Device Technology, 1996, Yokohama, Japan

Abstract

In this paper, different aspects of this annealing process using Single Shot high power Excimer Laser Annealing technique are examined successively. The energy density is optimized using Spectroscopic Ellipsometry technique. The crystallinity and roughness of the layers are characterized in addition to the layer thickness. The interest of large size laser beam is examined more precisely measuring the crystallinity in the transition zone between two laser shots. Finally the homogeneity of the layer is checked electrically by mapping the surface of a laser shot with TFT characteristics.

Citation Download Citation

Pierre Boher, Dorian Zahorski, Sylvie Prochasson, Bruno Godard, Jean-Louis P. Stehle, Y. Suzuki, and Akira Iwasaki "Single-shot excimer laser annealing of PECVD amorphous silicon", Proc. SPIE 2873, International Symposium on Polarization Analysis and Applications to Device Technology, (16 August 1996); https://doi.org/10.1117/12.246244

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