Stability and reliability of fully depleted SOI MOSFETs

Toshiaki Tsuchiya

doi:10.1117/12.250855

13 September 1996 Stability and reliability of fully depleted SOI MOSFETs

Toshiaki Tsuchiya

Proceedings Volume 2875, Microelectronic Device and Multilevel Interconnection Technology II; (1996) https://doi.org/10.1117/12.250855
Event: Microelectronic Manufacturing 1996, 1996, Austin, TX, United States

Abstract

Stability and hot carrier reliability of fully-developed (FD) MOSFET's are investigated using quarter-micron level CMOS/SIMOX devices. It is shown that FD devices are more dynamically stable than partially-depleted (PD) devices in terms of floating body effects related to impact-ionization, and majority carrier redistribution in the body region due to on and off gate voltage. Parasitic bipolar action in FD devices is remarkably suppressed by introducing recombination centers near the source junction, and the source-to-drain breakdown voltage is improved. The hot- carrier-injected oxide regions in the front and back interfaces are investigated, and how the hot-carrier-induced damage affects the device characteristics is shown. A new hot-carrier degradation mode peculiar to SOI MOSFET's is described which greatly reduces the device's lifetime. The new mode can be avoided by introducing recombination centers near the source junction, and it is shown that FD devices have high hot-carrier reliability.

Citation Download Citation

Toshiaki Tsuchiya "Stability and reliability of fully depleted SOI MOSFETs", Proc. SPIE 2875, Microelectronic Device and Multilevel Interconnection Technology II, (13 September 1996); https://doi.org/10.1117/12.250855

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