Thermal wave analysis of the formation of titanium disilicide on submicron lines

Alain Brun; Eric Gerritsen; Nicole Brun

doi:10.1117/12.250921

13 September 1996 Thermal wave analysis of the formation of titanium disilicide on submicron lines

Alain Brun, Eric Gerritsen, Nicole Brun

Proceedings Volume 2877, Optical Characterization Techniques for High-Performance Microelectronic Device Manufacturing III; (1996) https://doi.org/10.1117/12.250921
Event: Microelectronic Manufacturing 1996, 1996, Austin, TX, United States

Abstract

In this paper we demonstrate the feasibility of an in-line, non-destructive method, thermal wave imaging, to characterize the formation of titanium disilicide on narrow lines. The observation of thermal-wave signals and images allows us to distinguish the formation and structure of the metastable, high-resistivity, C49 phase and the equilibrium, low-resistivity C54 phase of the disilicide. Patterned wafers, having linewidths in the range of 1.5 to 0.4 micrometer were used to study the effect of rapid thermal anneal conditions and linewidth on disilicide formation. The transformation temperature of C49 to paper we demonstrate the feasibility of an in-line, non-destructive method, thermal wave imaging, to characterize C54 disilicide during a 20 second isothermal anneal was found to increase by more than 50 degrees Celsius when decreasing the linewidth to 0.4 micrometer.

Citation Download Citation

Alain Brun, Eric Gerritsen, and Nicole Brun "Thermal wave analysis of the formation of titanium disilicide on submicron lines", Proc. SPIE 2877, Optical Characterization Techniques for High-Performance Microelectronic Device Manufacturing III, (13 September 1996); https://doi.org/10.1117/12.250921

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