Effects of annealing on characteristics of the ITO films

Shiyong Huang; Demiao Wang; Gaochao Ren; Kangsheng Chen

doi:10.1117/12.253339

30 September 1996 Effects of annealing on characteristics of the ITO films

Shiyong Huang, Demiao Wang, Gaochao Ren, Kangsheng Chen

Author Affiliations +

Proceedings Volume 2892, Display Devices and Systems; (1996) https://doi.org/10.1117/12.253339
Event: Photonics China '96, 1996, Beijing, China

Abstract

Transparent conductive ITO films deposited on glass have been widely used as electrodes of liquid crystal display and other flat panel display. It is well known that the properties of ITO films are strongly effected by depositing condition, especially for the case of the films prepared by reactive sputtering of metallic alloy (indium/tin) targets. In this paper, we present the effects of post-annealing in air and vacuum on the properties of ITO films, such as the conductivity, transparency, crystal structure and thermal stability. By post-annealing, the ITO films with good quality have been obtained, the sheet resistance is as low as 50 (Omega) /square, the transparency as high as 95%.

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Shiyong Huang, Demiao Wang, Gaochao Ren, and Kangsheng Chen "Effects of annealing on characteristics of the ITO films", Proc. SPIE 2892, Display Devices and Systems, (30 September 1996); https://doi.org/10.1117/12.253339

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