MIM thin film diode with excellent switching characteristics for LCD

Huifen Huang; Daming Zhuang; Yunfen Liu; Minji Zhu; Haokang Zhang; Guoping Chen

doi:10.1117/12.253367

30 September 1996 MIM thin film diode with excellent switching characteristics for LCD

Huifen Huang, Daming Zhuang, Yunfen Liu, Minji Zhu, Haokang Zhang, Guoping Chen

Author Affiliations +

Proceedings Volume 2892, Display Devices and Systems; (1996) https://doi.org/10.1117/12.253367
Event: Photonics China '96, 1996, Beijing, China

Abstract

A Ta-Ta₂O₅-Ta MIM thin film diode for active-matrix LCD is described. The Ta₂O₅ thin film insulator layer of the MIM thin film diode were formed by anodizing sputtered tantalum oxide films (sputtering/anodization two- step process). Experimental results showed that the MIM diode using the two-step oxidized sputtered/anodized tantalum oxide films had the threshold voltage as low as 5 V, the switching-on/off ratio about 10⁵, and a more symmetrical I-V characteristic.

Citation Download Citation

Huifen Huang, Daming Zhuang, Yunfen Liu, Minji Zhu, Haokang Zhang, and Guoping Chen "MIM thin film diode with excellent switching characteristics for LCD", Proc. SPIE 2892, Display Devices and Systems, (30 September 1996); https://doi.org/10.1117/12.253367

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