Characterization of HgCdTe epilayers grown on GaAs(211)B by molecular beam epitaxy

Shida Chen; Xianzhong He; Li Lin

doi:10.1117/12.252113

25 September 1996 Characterization of HgCdTe epilayers grown on GaAs(211)B by molecular beam epitaxy

Shida Chen, Xianzhong He, Li Lin

Proceedings Volume 2894, Detectors, Focal Plane Arrays, and Applications; (1996) https://doi.org/10.1117/12.252113
Event: Photonics China '96, 1996, Beijing, China

Abstract

The growth of HgCdTe(MCT) epilayers on GaAs(211)B substrate by molecular beam epitaxy (MBE) have been reported. The growth procedure of MCT is described. Various characterization techniques have been employed for evaluating the quality of MCT epilayers. A planar PV array are fabricated for assessment of MCT epilayer quality. The present results represent an important step toward the demonstration of MBE epilayers for fabrication of focal plane arrays.

Citation Download Citation

Shida Chen, Xianzhong He, and Li Lin "Characterization of HgCdTe epilayers grown on GaAs(211)B by molecular beam epitaxy", Proc. SPIE 2894, Detectors, Focal Plane Arrays, and Applications, (25 September 1996); https://doi.org/10.1117/12.252113

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