High-performance 1.3-um GaInAsP/InP tensile-strained quantum well lasers

Noriyuki Yokouchi; Akihiko Kasukawa

doi:10.1117/12.273808

2 May 1997 High-performance 1.3-um GaInAsP/InP tensile-strained quantum well lasers

Noriyuki Yokouchi, Akihiko Kasukawa

Proceedings Volume 3001, In-Plane Semiconductor Lasers: from Ultraviolet to Midinfrared; (1997) https://doi.org/10.1117/12.273808
Event: Photonics West '97, 1997, San Jose, CA, United States

Abstract

Tensile-strained GaInAsP/InP quantum well (QW) lasers emitting at 1.3 micrometers are investigated. By introducing tensile-strained QW as an active region, low threshold current operation with good temperature characteristic are obtained. The lowest threshold current of 1.0 mA was achieved in a triple QW laser. Enhanced differential gain shows the feasibility of high speed operation. We also verified long-term reliability of approximately 10⁵ hours at 85 degree(s)C, 10 mW condition.

Citation Download Citation

Noriyuki Yokouchi and Akihiko Kasukawa "High-performance 1.3-um GaInAsP/InP tensile-strained quantum well lasers", Proc. SPIE 3001, In-Plane Semiconductor Lasers: from Ultraviolet to Midinfrared, (2 May 1997); https://doi.org/10.1117/12.273808

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