High-power InGaAs(P)/InGa(Al)P/GaAs semiconductor diode lasers

Luke J. Mawst; Dan Botez

doi:10.1117/12.273784

2 May 1997 High-power InGaAs(P)/InGa(Al)P/GaAs semiconductor diode lasers

Luke J. Mawst, Dan Botez

Proceedings Volume 3001, In-Plane Semiconductor Lasers: from Ultraviolet to Midinfrared; (1997) https://doi.org/10.1117/12.273784
Event: Photonics West '97, 1997, San Jose, CA, United States

Abstract

Al-free active-region, 100 micrometers -stripe lasers operating at a wavelength of 0.98 micrometers (0.81 micrometers ), provide high CW powers: 8W (5W) and `wallplug' efficiencies: 66% (45%). At 0.81 micrometers , the devices are potentially twice as reliable as Al-containing active-layer devices.

Citation Download Citation

Luke J. Mawst and Dan Botez "High-power InGaAs(P)/InGa(Al)P/GaAs semiconductor diode lasers", Proc. SPIE 3001, In-Plane Semiconductor Lasers: from Ultraviolet to Midinfrared, (2 May 1997); https://doi.org/10.1117/12.273784

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