Paper
28 July 1997 CD variation sources of photomask
Byung Guk Kim, Seong-Woon Choi, Yong Hun Yu, Hee-Sun Yoon, Jung-Min Sohn
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Abstract
In recent, the analysis of the reason why CD uniformity error is produced on photomask has been performed and this is very important fact for the development of next generation mask. The analysis shows that current 6-inch 250 mil masks have systematic radial and side to side CD variation trend. In this paper, the reasons of these nonrandom errors of CD variation in mask making have been investigated by using some experimental methods. First, the verification of radial CD error has been performed with a viewpoint of chemical flow on mask in conjunction with spin process and dip process. The result shows that the radial error was largely dependent on blank mask rather than spin process effect. In that evidence, high temperature softbaking improved radial CD uniformity. Fundamentally, however, exposure contrast degradation is thought to be the major reason of the radial CD uniformity error. Secondly, side to side CD variation could be explained by chrome sputtering mechanism on blank mask.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Byung Guk Kim, Seong-Woon Choi, Yong Hun Yu, Hee-Sun Yoon, and Jung-Min Sohn "CD variation sources of photomask", Proc. SPIE 3096, Photomask and X-Ray Mask Technology IV, (28 July 1997); https://doi.org/10.1117/12.277271
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KEYWORDS
Critical dimension metrology

Photomasks

Error analysis

Polymers

Sputter deposition

Quartz

Scattering

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