Autostoichiometric vapor-gel deposition of ferroelectric thin films

Ren Xu

doi:10.1117/12.284133

2 October 1997 Autostoichiometric vapor-gel deposition of ferroelectric thin films

Ren Xu

Proceedings Volume 3136, Sol-Gel Optics IV; (1997) https://doi.org/10.1117/12.284133
Event: Optical Science, Engineering and Instrumentation '97, 1997, San Diego, CA, United States

Abstract

An autostoichiometric vapor gel deposition approach is demonstrated for ferroelectric LiTaO₃ and LiNbO₃ thin films. This approach utilizes the partial hydrolysis of hygroscopic alkoxide in the vapor phase, and the subsequent polycondensation on a heated substrate. Epitaxial films with precisely controlled stoichiometry were obtained. Ultra low temperature deposition was achieved taking advantage of the inherently low temperature sol-gel chemistry. The vapor phase hydrolysis of alkoxides provided a mild deposition reaction that allows for the autostoichiometric deposition. The vapor gel method appears to possess the combined advantages of sol- gel processing and MOCVD.

Citation Download Citation

Ren Xu "Autostoichiometric vapor-gel deposition of ferroelectric thin films", Proc. SPIE 3136, Sol-Gel Optics IV, (2 October 1997); https://doi.org/10.1117/12.284133

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