Paper
14 July 1997 Modeling of the influence of free carrier concentration on the elastic properties of n-ZnSe single crystals
Tadeusz J. Hoffmann, P. Ziobrowski, Miroslaw Drozdowski
Author Affiliations +
Proceedings Volume 3178, Solid State Crystals: Growth and Characterization; (1997) https://doi.org/10.1117/12.280739
Event: XII Conference on Solid State Crystals: Materials Science and Applications, 1996, Zakopane, Poland
Abstract
In this paper we present a single phenomenological magneto- elastic mechanism for the elastic properties of crystals with different free carrier concentration. Using this theory, the basic mechanism for the effect of free carrier concentration on the elastic properties of n-ZnSe crystals has been discussed.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tadeusz J. Hoffmann, P. Ziobrowski, and Miroslaw Drozdowski "Modeling of the influence of free carrier concentration on the elastic properties of n-ZnSe single crystals", Proc. SPIE 3178, Solid State Crystals: Growth and Characterization, (14 July 1997); https://doi.org/10.1117/12.280739
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KEYWORDS
Crystals

Magnetism

Annealing

Magnetic semiconductors

Motion models

Scattering

Semiconductors

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