Paper
13 June 1997 Recent advances in TLM algorithms for semiconductor transport
Donard de Cogan, A. Chakrabarti, C. P. Kenny
Author Affiliations +
Proceedings Volume 3179, Solid State Crystals in Optoelectronics and Semiconductor Technology; (1997) https://doi.org/10.1117/12.276238
Event: XII Conference on Solid State Crystals: Materials Science and Applications, 1996, Zakopane, Poland
Abstract
Transmission Line Matrix (TLM) is a numerical technique which can be used to simulate wide range of physical process. In the area of semiconductor device modeling the correct choice of electromagnetic analogue can have a strong influence on the stability, accuracy and efficiency of algorithms. This paper reviews recent progress in TLM with particular attention to the drift-diffusion process in carrier transport in semiconductors.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Donard de Cogan, A. Chakrabarti, and C. P. Kenny "Recent advances in TLM algorithms for semiconductor transport", Proc. SPIE 3179, Solid State Crystals in Optoelectronics and Semiconductor Technology, (13 June 1997); https://doi.org/10.1117/12.276238
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Diffusion

Semiconductors

Convection

Modeling

Astatine

Resistors

Capacitance

Back to Top