Paper
26 August 1997 Correlation between crystal defects and properties of CdTe:Ge radiation detectors
P. Feichuk, L. Shcherbak, D. Pluta, Pavel Moravec, Jan Franc, Eduard Belas, Pavel Hoschl
Author Affiliations +
Proceedings Volume 3182, Material Science and Material Properties for Infrared Optoelectronics; (1997) https://doi.org/10.1117/12.280410
Event: Material Science and Material Properties for Infrared Optoelectronics, 1996, Uzhgorod, Ukraine
Abstract
High resistivity Ge-doped crystals with exact defined by radiometric analysis Ge contain were characterized by IR microscopy, dislocation etch techniques, scanning electron microscopy followed by detector performance features examination. the influence of several defect structure types on detector parameters were shown.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
P. Feichuk, L. Shcherbak, D. Pluta, Pavel Moravec, Jan Franc, Eduard Belas, and Pavel Hoschl "Correlation between crystal defects and properties of CdTe:Ge radiation detectors", Proc. SPIE 3182, Material Science and Material Properties for Infrared Optoelectronics, (26 August 1997); https://doi.org/10.1117/12.280410
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Cited by 6 scholarly publications.
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KEYWORDS
Sensors

Crystals

Infrared sensors

Etching

Germanium

Infrared microscopy

Microscopy

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