Picosecond And Subpicosecond Luminescence In Semiconductors

D. L. Rosen; A. Katz; A. G. Doukas; Y. Budansky; R. R. Alfano

doi:10.1117/12.933233

23 April 1982 Picosecond And Subpicosecond Luminescence In Semiconductors

D. L. Rosen, A. Katz, A. G. Doukas, Y. Budansky, R. R. Alfano

Proceedings Volume 0322, Picosecond Lasers and Applications; (1982) https://doi.org/10.1117/12.933233
Event: 1982 Los Angeles Technical Symposium, 1982, Los Angeles, United States

Abstract

Transient recombination kinetics of photogenerated elementary excitations in semiconductors can be studied with subpicosecond time resolution. This note describes the different time resolved luminescence techniques which are applicable to semiconductors, such as the optical Kerr gate, the up-conversion gate, the streak camera, the three-pulse excitation method and the population mixing method.

Citation Download Citation

D. L. Rosen, A. Katz, A. G. Doukas, Y. Budansky, and R. R. Alfano "Picosecond And Subpicosecond Luminescence In Semiconductors", Proc. SPIE 0322, Picosecond Lasers and Applications, (23 April 1982); https://doi.org/10.1117/12.933233

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