Use Of Column V Alkyls In Organometallic Vapor Phase Epitaxy (OMVPE)

M. J. Ludowise; C. B. Cooper III

doi:10.1117/12.934285

15 September 1982 Use Of Column V Alkyls In Organometallic Vapor Phase Epitaxy (OMVPE)

M. J. Ludowise, C. B. Cooper III

Proceedings Volume 0323, Semiconductor Growth Technology; (1982) https://doi.org/10.1117/12.934285
Event: 1982 Los Angeles Technical Symposium, 1982, Los Angeles, United States

Abstract

The use of the column V trialkyls trimethylarsenic (TMAs) and trimethylantimony (TMSb) for the organometallic vapor phase epitaxy (OM-VPE) of III-V compound semiconductors is reviewed. A general discussion of the interaction chemistry of common Group III and Group V reactants is presented. The practical application of TMSb and TMAs for OM-VPE is demonstrated using the growth of GaSb, GaAs1-ySby, Al x Ga1-xSb and Ga1-xInxAs as examples.

Citation Download Citation

M. J. Ludowise and C. B. Cooper III "Use Of Column V Alkyls In Organometallic Vapor Phase Epitaxy (OMVPE)", Proc. SPIE 0323, Semiconductor Growth Technology, (15 September 1982); https://doi.org/10.1117/12.934285

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