AlGaAs/GaAs etched-facet laser with in-situ C2H5Cl gas-phase etching and MOCVD regrowth

Mutsuo Ogura; Seiji Ikawa

doi:10.1117/12.307591

4 May 1998 AlGaAs/GaAs etched-facet laser with in-situ C₂H₅Cl gas-phase etching and MOCVD regrowth

Mutsuo Ogura, Seiji Ikawa

Proceedings Volume 3285, Fabrication, Testing, Reliability, and Applications of Semiconductor Lasers III; (1998) https://doi.org/10.1117/12.307591
Event: Optoelectronics and High-Power Lasers and Applications, 1998, San Jose, CA, United States

Abstract

Etched facet lasers are important components to realize laser arrays and optical integrated circuits (OEICs), in which reduction of the processing complexity is one of the key issues. We found that C₂H₅Cl gas-phase etching produces a vertical etched facet along the [0-1 1] direction in GaAs and AlGaAs. The vertical etching with the velocity of 2.5 to 1.6 micrometer/hour is obtained in GaAs and Al_0.5Ga_0.5As, respectively, with the C₂H₅Cl gas-phase etching at 680 degrees Celsius along a SiO₂ mask parallel to the [0-1 1] direction. The angle of the facets is 85 degrees, which is not affected with the aluminum concentration. (111)B facets reveal along the [0-1 -1] direction. This gas-phase etching technique is combined with MOCVD regrowth to realize a BH AlGaAs/GaAs laser with etched facets and optical coating. The entire etched side walls, i.e. vertically etched facets and (111)B side walls along the laser stripes are immediately embedded with regrown AlGaAs in the same process chamber by switching an etching gas to metal organic sources. Conventional processing steps to fabricate an etched facet BH laser are comprised of initial etching for waveguide definition, regrowth to form BH structure, dry etching or cleaving for facet formation and facet coating. This in-situ gas-phase etching and regrowth technique reduces such 4 processing steps into gas manipulation inside of the same growth furnace and greatly reduces the processing cost of OEICs.

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Mutsuo Ogura and Seiji Ikawa "AlGaAs/GaAs etched-facet laser with in-situ C₂H₅Cl gas-phase etching and MOCVD regrowth", Proc. SPIE 3285, Fabrication, Testing, Reliability, and Applications of Semiconductor Lasers III, (4 May 1998); https://doi.org/10.1117/12.307591

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KEYWORDS

Etching

Gallium arsenide

Metalorganic chemical vapor deposition

Aluminum

Laser processing

Photomasks

Photonic integrated circuits

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