Comparing inorganic and organic BARC for a deep submicron gate patterning and etch

Julia M. Wu; Sagar Kekare; Karen Fox; Kafai Lai; Nandasiri Samarakone

doi:10.1117/12.308784

8 June 1998 Comparing inorganic and organic BARC for a deep submicron gate patterning and etch

Julia M. Wu, Sagar Kekare, Karen Fox, Kafai Lai, Nandasiri Samarakone

Proceedings Volume 3332, Metrology, Inspection, and Process Control for Microlithography XII; (1998) https://doi.org/10.1117/12.308784
Event: 23rd Annual International Symposium on Microlithography, 1998, Santa Clara, CA, United States

Abstract

The continued push towards smaller feature sizes has placed increasingly stringent demands upon CD control. Several techniques have been used in the past to improve the CD control over topography, starting with dyed resist and progressing through top anti-reflective coating, spin on- organic BARC and more recently inorganic dielectric ARC. The increased use of DUV lithography has limited the use of the TAR coating, as it fails to prevent true reflective notching. Organic BARC has therefore been the method of choice. Recently however, the use of inorganic dielectric anti-reflective materials has become more widespread due to potentially improved performance, particularly over high topography. We report on the relative performance of both types of materials as applicable to MOS gates. Practical factors such as resist footing, relative defectivity after polysilicon patterning, CD bias after etch, problems in removal of the ARC during etch and strip and the impact on process integration are discussed. The overall aim is to provide a production viewpoint as to the usefulness of each approach and to highlight their individual strengths and weaknesses.

Citation Download Citation

Julia M. Wu, Sagar Kekare, Karen Fox, Kafai Lai, and Nandasiri Samarakone "Comparing inorganic and organic BARC for a deep submicron gate patterning and etch", Proc. SPIE 3332, Metrology, Inspection, and Process Control for Microlithography XII, (8 June 1998); https://doi.org/10.1117/12.308784

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