Photoresist focus exposure matrix (FEM) measurements using critical-dimension atomic force microscopy (CD AFM)

A. Meyyappan; Sylvain Muckenhirn

doi:10.1117/12.308777

8 June 1998 Photoresist focus exposure matrix (FEM) measurements using critical-dimension atomic force microscopy (CD AFM)

A. Meyyappan, Sylvain Muckenhirn

Author Affiliations +

Proceedings Volume 3332, Metrology, Inspection, and Process Control for Microlithography XII; (1998) https://doi.org/10.1117/12.308777
Event: 23rd Annual International Symposium on Microlithography, 1998, Santa Clara, CA, United States

Abstract

Focus exposure matrices (FEMs) are a critical tool for evaluating the performance of lithographic processes. Any change in any process component, including critical dimension (CD) targets, chemistry, optics, or processing times requires that an FEM be run to verify process performance. Scheduled FEMs are also used as part of regular process monitoring. The CD-AFM is a powerful tool in evaluating FEMs. Unlike standard AFMs it quantitatively profiles lines and trenches in three dimensions. Further, none of the tedious and time consuming sample preparation required by cross-sectional TEM or SEM is needed; since samples need not be cleaved, profiles can conveniently be measured anywhere on the wafer and in any order. A CD-FEM is used to characterize an FEM wafer and the results are compared with those obtained with electron microscopy. First, the CD-AFM is calibrated, which includes the characterization of the tip geometry. Then, the measurements on the FEM wafer is made and the results computed taking the tip width into account. The measurements thus obtained are compared with SEM measurements.

Citation Download Citation

A. Meyyappan and Sylvain Muckenhirn "Photoresist focus exposure matrix (FEM) measurements using critical-dimension atomic force microscopy (CD AFM)", Proc. SPIE 3332, Metrology, Inspection, and Process Control for Microlithography XII, (8 June 1998); https://doi.org/10.1117/12.308777

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