Sampling requirements for the analysis of misregistration

Ramkumar Subramanian; William D. Heavlin; Eileen M. Coons; Bharath Rangarajan

doi:10.1117/12.308781

8 June 1998 Sampling requirements for the analysis of misregistration

Ramkumar Subramanian, William D. Heavlin, Eileen M. Coons, Bharath Rangarajan

Proceedings Volume 3332, Metrology, Inspection, and Process Control for Microlithography XII; (1998) https://doi.org/10.1117/12.308781
Event: 23rd Annual International Symposium on Microlithography, 1998, Santa Clara, CA, United States

Abstract

With the adoption of increasingly tight design rules (less than 100 nm) for overlay, it is critical that the sample used to quantify wafer misregistration be as representative as possible. In this paper, we look at misregistration after two layers, both chosen as most critical to overlay design rules for a logic technology process. Several wafers at each layer were patterned, after which they were mapped on a KLA overlay tool. The mapping was done on all sites with 5 measurement points on each site in an X pattern. The wafers also had been subject to chemical-mechanical polish and its associated mechanical stresses. We identify representative extreme sites using a statistical technique called archetypal analysis. We describe how many sample points are required to adequately describe the distribution of overlay across a wafer.

Citation Download Citation

Ramkumar Subramanian, William D. Heavlin, Eileen M. Coons, and Bharath Rangarajan "Sampling requirements for the analysis of misregistration", Proc. SPIE 3332, Metrology, Inspection, and Process Control for Microlithography XII, (8 June 1998); https://doi.org/10.1117/12.308781

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