Enhancement of process latitude by reducing resist thickness for KrF excimer laser lithography

Masafumi Asano; Yumiko Maruyama; Toru Koike; Kenji Chiba; Eishi Shiobara; Takahiro Ikeda

doi:10.1117/12.312447

29 June 1998 Enhancement of process latitude by reducing resist thickness for KrF excimer laser lithography

Masafumi Asano, Yumiko Maruyama, Toru Koike, Kenji Chiba, Eishi Shiobara, Takahiro Ikeda

Proceedings Volume 3333, Advances in Resist Technology and Processing XV; (1998) https://doi.org/10.1117/12.312447
Event: 23rd Annual International Symposium on Microlithography, 1998, Santa Clara, CA, United States

Abstract

Reducing resist thickness easily and simultaneously decreases the k1 factor and increases the k2 factor in conventional Rayleigh equations, without changing the wavelength of the illumination light and NA of the optics. In this work, we investigated the effect of reduced resist thickness on process latitude and optical proximity effect (OPE) at the sub-quarter micron level. The experiment exposures were performed by a 0.6 NA KrF excimer step and scan system with an in-house chemically amplified positive resist in the thickness range of 0.6 micrometers to 0.25 micrometers . The results showed remarkable improvements in process latitude of both 0.175 micrometers L&S and 0.225 micrometers contact hole, as well as OPE such as a CD variation between different pitches and a feature deformation at isolation by reducing resist thickness.

Citation Download Citation

Masafumi Asano, Yumiko Maruyama, Toru Koike, Kenji Chiba, Eishi Shiobara, and Takahiro Ikeda "Enhancement of process latitude by reducing resist thickness for KrF excimer laser lithography", Proc. SPIE 3333, Advances in Resist Technology and Processing XV, (29 June 1998); https://doi.org/10.1117/12.312447

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