Paper
1 September 1998 Status of x-ray mask development at the IBM Advanced Mask Facility
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Abstract
IBM's Advanced Mask Facility in Essex Junction, Vermont, is responsible for the company's x-ray mask technology development and manufacturing. During the first half of 1997, this facility replaced the gold x-ray absorber with a refractory material in order to provide a greater compatibility between proximity x-ray masks and semiconductor manufacturing lines. Significant progress has been made to position x-ray masks are currently being delivered for advanced logic and memory applications. This paper discusses key process improvements such as the implementation of new deposition, annealing, etching and measurement equipment. Performance of critical parameters is presented, including the quality of substrates and absorber film stacks, image size and placement control, and defect density. The technology challenges and IBM's roadmap for application masks below 130nm are also provided.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kenneth C. Racette "Status of x-ray mask development at the IBM Advanced Mask Facility", Proc. SPIE 3412, Photomask and X-Ray Mask Technology V, (1 September 1998); https://doi.org/10.1117/12.328846
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CITATIONS
Cited by 3 scholarly publications.
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KEYWORDS
Photomasks

X-rays

Etching

Silicon

Semiconducting wafers

Silicon carbide

Tantalum

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