Paper
4 December 1998 Carrier dynamics in InGaAsP MQW laser structures
C. Rejeb, Romain Maciejko, D. Morris, Toshihiko Makino
Author Affiliations +
Abstract
We investigate vertical carrier transport, carrier relaxation and capture in three In1-xGaxAsyP1-y multiple-quantum-well lasers structures emitting at 1.3 and 1.55 micrometers at room temperature using time resolved photoluminescence. In the initial regime following the excitation, high effective carrier temperatures Tc different from the lattice temperature TL equals 77 K are reported. A significant signature of transport and capture is observed with characteristic times of approximately 10 ps and approximately 12 ps respectively.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
C. Rejeb, Romain Maciejko, D. Morris, and Toshihiko Makino "Carrier dynamics in InGaAsP MQW laser structures", Proc. SPIE 3491, 1998 International Conference on Applications of Photonic Technology III: Closing the Gap between Theory, Development, and Applications, (4 December 1998); https://doi.org/10.1117/12.328680
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Cited by 1 scholarly publication.
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KEYWORDS
Quantum wells

Picosecond phenomena

Technetium

Carrier dynamics

Luminescence

Electrons

Diffusion

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