Quantum well intermixing in GaAs-AlGaAs laser structure using sol-gel SiO2 dielectric cap

Lye Huat Lee; Boon Siew Ooi; Yee Loy Lam; Yuen Chuen Chan; Chan Hin Kam

doi:10.1117/12.319645

19 August 1998 Quantum well intermixing in GaAs-AlGaAs laser structure using sol-gel SiO₂ dielectric cap

Lye Huat Lee, Boon Siew Ooi, Yee Loy Lam, Yuen Chuen Chan, Chan Hin Kam

Proceedings Volume 3547, Semiconductor Lasers III; (1998) https://doi.org/10.1117/12.319645
Event: Photonics China '98, 1998, Beijing, China

Abstract

Intermixing of quantum confined heterostructures, or quantum well intermixing (QWI), is an attractive alternative to regrowth and overgrowth techniques for realizing photonic and optoelectronic integrated circuits. Impurity free vacancy diffusion using SiO₂ dielectric cap is one of the promising QWI techniques. Silicon dioxide is known to induce outdiffusion of Ga and generate vacancies in GaAs- AlGaAs material during annealing. These vacancies, generated on the group-III sublattice, can be used to promote the diffusion of Al into a buried quantum well (QW) and the diffusion of Ga into the barriers and hence shift the QW band gap to higher energy by partially intermixed the quantum well.

Citation Download Citation

Lye Huat Lee, Boon Siew Ooi, Yee Loy Lam, Yuen Chuen Chan, and Chan Hin Kam "Quantum well intermixing in GaAs-AlGaAs laser structure using sol-gel SiO₂ dielectric cap", Proc. SPIE 3547, Semiconductor Lasers III, (19 August 1998); https://doi.org/10.1117/12.319645

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