Paper
12 August 1998 Electroluminescence and photoluminescence of Si/SiGe self-assembly quantum dot structures
Junjie Si, Qingqing Yang, Hongjie Wang, Qiming Wang, Liwei Guo, Junming Zhou
Author Affiliations +
Abstract
Comparative electroluminescence (EL) and photoluminescence (PL) measurements were performed on Si/Si0.6Ge0.4 self-assembly quantum dots (QDs) structures. The samples were grown pseudomorphically by molecular beam epitaxy, and PIN diodes for electroluminescence were fabricated. Assisted TEM pictures shows the SiGe self-assembly QDs are plate-like. And it showed that the diameters of QDs are in range from 40 nm to 140 nm with the most in 120 nm. Both EL and PL has a wide luminescence peak due to wide distribution of QDs dimensions. At low temperature (T equals 14 K), EL peak has a red shift compared to the corresponding PL peak. Its full-width at half- maximum (FWHM) is about 97 meV, a little smaller than that of corresponding PL peak. The reasons of position and FWHM changes of EL peak from QDs have been discussed.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Junjie Si, Qingqing Yang, Hongjie Wang, Qiming Wang, Liwei Guo, and Junming Zhou "Electroluminescence and photoluminescence of Si/SiGe self-assembly quantum dot structures", Proc. SPIE 3551, Integrated Optoelectronics II, (12 August 1998); https://doi.org/10.1117/12.317998
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KEYWORDS
Electroluminescence

Silicon

Luminescence

Quantum dots

Optoelectronics

Germanium

Electrodes

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