Comparative study of near-threshold stimulated emission mechanisms in GaN epilayers and InGaN/GaN multiquantum wells

Sergiy Bidnyk; Theodore J. Schmidt; Brian D. Little; Jerzy S. Krasinski; Jin-Joo Song; Stacia Keller; Steven P. DenBaars

doi:10.1117/12.356931

6 August 1999 Comparative study of near-threshold stimulated emission mechanisms in GaN epilayers and InGaN/GaN multiquantum wells

Sergiy Bidnyk, Theodore J. Schmidt, Brian D. Little, Jerzy S. Krasinski, Jin-Joo Song, Stacia Keller, Steven P. DenBaars

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Proceedings Volume 3625, Physics and Simulation of Optoelectronic Devices VII; (1999) https://doi.org/10.1117/12.356931
Event: Optoelectronics '99 - Integrated Optoelectronic Devices, 1999, San Jose, CA, United States

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Sergiy Bidnyk, Theodore J. Schmidt, Brian D. Little, Jerzy S. Krasinski, Jin-Joo Song, Stacia Keller, and Steven P. DenBaars "Comparative study of near-threshold stimulated emission mechanisms in GaN epilayers and InGaN/GaN multiquantum wells", Proc. SPIE 3625, Physics and Simulation of Optoelectronic Devices VII, (6 August 1999); https://doi.org/10.1117/12.356931

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