850-nm oxide VCSEL development at Hewlett-Packard

Hongyu Deng; James J. Dudley; Sui F. Lim; Chun Lei; Bing Liang; M. Tashima; Lee A. Hodge; Xuemei Zhang; John Herniman; Robert W. Herrick

doi:10.1117/12.347103

29 April 1999 850-nm oxide VCSEL development at Hewlett-Packard

Hongyu Deng, James J. Dudley, Sui F. Lim, Chun Lei, Bing Liang, M. Tashima, Lee A. Hodge, Xuemei Zhang, John Herniman, Robert W. Herrick

Author Affiliations +

Proceedings Volume 3627, Vertical-Cavity Surface-Emitting Lasers III; (1999) https://doi.org/10.1117/12.347103
Event: Optoelectronics '99 - Integrated Optoelectronic Devices, 1999, San Jose, CA, United States

Abstract

Oxide confined VCSELs are being developed at Hewlett-Packard for the next-generation low cost fiber optics communication applications. Compared to the existing 850 nm implant confined VCSELs, the oxide VCSELs have lower operating voltages, higher slope efficiencies, and better modal bandwidth characteristics. Preliminary data on epitaxy and oxidation control uniformity, device performance, and reliability will be discussed.

Citation Download Citation

Hongyu Deng, James J. Dudley, Sui F. Lim, Chun Lei, Bing Liang, M. Tashima, Lee A. Hodge, Xuemei Zhang, John Herniman, and Robert W. Herrick "850-nm oxide VCSEL development at Hewlett-Packard", Proc. SPIE 3627, Vertical-Cavity Surface-Emitting Lasers III, (29 April 1999); https://doi.org/10.1117/12.347103

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