Paper
25 June 1999 Advanced refractory-metal and process technology for the fabrication of x-ray masks
Cameron J. Brooks, Kenneth C. Racette, Michael J. Lercel, Lynn A. Powers, Douglas E. Benoit
Author Affiliations +
Abstract
This paper provides an in-depth report of the advanced materials and process technology being developed for x-ray mask manufacturing at IBM. Masks using diamond membranes as replacement for silicon carbide are currently being fabricated. Alternate tantalum-based absorbers, such as tantalum boron, which offer improved etch resolution and critical dimension control, as well as higher x-ray absorption, are also being investigated. In addition to the absorber studies, the development of conductive chromium- based hard-mask films to replace the current silicon oxynitride layer is being explored. The progress of this advanced-materials work, which includes significant enhancements to x-ray mask image-placement performance, will be outlined.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Cameron J. Brooks, Kenneth C. Racette, Michael J. Lercel, Lynn A. Powers, and Douglas E. Benoit "Advanced refractory-metal and process technology for the fabrication of x-ray masks", Proc. SPIE 3676, Emerging Lithographic Technologies III, (25 June 1999); https://doi.org/10.1117/12.351107
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Cited by 1 scholarly publication.
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KEYWORDS
X-rays

Photomasks

Etching

Chromium

Diamond

Silicon carbide

Argon

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