Simulation on a new reflection type attenuated phase-shifting mask for extreme ultraviolet lithography

Hsuen-Li Chen; Lon A. Wang

doi:10.1117/12.351131

25 June 1999 Simulation on a new reflection type attenuated phase-shifting mask for extreme ultraviolet lithography

Hsuen-Li Chen, Lon A. Wang

Proceedings Volume 3676, Emerging Lithographic Technologies III; (1999) https://doi.org/10.1117/12.351131
Event: Microlithography '99, 1999, Santa Clara, CA, United States

Abstract

We have simulated the optical behavior of a new reflective APSM by utilizing the optical multilayer thin film theory. In a typical Mo/Si multilayer structure, we show that the requirement of a reflective APSM can be met simply by adjusting the thickness of the over-coated Ge layer. A phase shift of 180 degrees results when compared light reflected from a Ge absorption layer to that form a Mo/Si multilayer, and the resultant reflectance ratio is in the range of 4-15 percent. No additional phase shifting layer is needed.

Citation Download Citation

Hsuen-Li Chen and Lon A. Wang "Simulation on a new reflection type attenuated phase-shifting mask for extreme ultraviolet lithography", Proc. SPIE 3676, Emerging Lithographic Technologies III, (25 June 1999); https://doi.org/10.1117/12.351131

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