Paper
14 June 1999 Post-pattern-inspection strategy
Mouli Vaidyanathan
Author Affiliations +
Abstract
Rapid yield ramp up in wafer processing fabs has become the most important task for process and yield engineers. In-line process monitoring using inspection tools are the traditional approaches to monitor excursion within the process line. Minor gains in yield ca increase revenue per wafer significantly, hence defect detection and defect feedback into process line is becoming the corner stone of fab yield success. Number of mask levels are becoming important to process fabs. Monitoring these mask levels so as to detect defects and feed information to the process line has become crucial to process yield. In order for this to happen a good understanding of the defects caused at the mask levels is important. An attempt will be made to discus the various types of defects present in the photomask levels and their relationships to their in-line detection. The discussion deals with scum defects, isolated bridging defects, pattern aspect ratio, and isolated and dense region patterning issues.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mouli Vaidyanathan "Post-pattern-inspection strategy", Proc. SPIE 3677, Metrology, Inspection, and Process Control for Microlithography XIII, (14 June 1999); https://doi.org/10.1117/12.350843
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KEYWORDS
Inspection

Objectives

Defect detection

Digital image correlation

Etching

Photomasks

Semiconducting wafers

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