Effect of developer temperature and normality on conventional and chemically amplified photoresist dissolution

Chris A. Mack; Mark John Maslow; Jeff D. Byers

doi:10.1117/12.346887

28 April 1999 Effect of developer temperature and normality on conventional and chemically amplified photoresist dissolution

Chris A. Mack, Mark John Maslow, Jeff D. Byers

Author Affiliations +

Proceedings Volume 3741, Lithography for Semiconductor Manufacturing; (1999) https://doi.org/10.1117/12.346887
Event: Microelectronic Manufacturing Technologies, 1999, Edinburgh, United Kingdom

Abstract

The effects of developer temperature on several conventional resist and one chemically amplified resist, and the effects of developer normality on the dissolution behavior of a 248nm chemically amplified resist, are examined using development rate measurements. Using an RDA-790 development rate measurement tool, dissolution rates as a function of dose and depth into the resist were measured. Each data set was analyzed and the performance of rate versus dissolution inhibitor concentration was fit to appropriate models. The variation of these results with developer temperature has led to temperature-dependent characterization of the dissolution modeling parameters. The variation of dissolution rate with developer normality has led to an initial characterization of the normality-dependent dissolution modeling parameters.

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Chris A. Mack, Mark John Maslow, and Jeff D. Byers "Effect of developer temperature and normality on conventional and chemically amplified photoresist dissolution", Proc. SPIE 3741, Lithography for Semiconductor Manufacturing, (28 April 1999); https://doi.org/10.1117/12.346887

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