100-GHz low-noise MESFET, HFET, and MSM technology for 10-Gb/s OEIC applications

Jinghui Mu; Milton Feng

doi:10.1117/12.370204

12 November 1999 100-GHz low-noise MESFET, HFET, and MSM technology for 10-Gb/s OEIC applications

Jinghui Mu, Milton Feng

Proceedings Volume 3795, Terahertz and Gigahertz Photonics; (1999) https://doi.org/10.1117/12.370204
Event: SPIE's International Symposium on Optical Science, Engineering, and Instrumentation, 1999, Denver, CO, United States

Abstract

Optical interconnects possess great potential in applications for short-distance, multiple channel parallel connections at the chip-to-chip, board-to-board, back plane, and local area network levels of high performance computing environments. Low-loss and high-bandwidth advantages of optical fiber over those for coaxial cables become sizable when the transmission speed exceeds multiple Gb/s. OEIC (Opto-Electronic Integrated Circuits) receivers and transmitters are suitable for both free-space and fiber-optic short-wavelength optical links. Such chip sets will be able to support link distances from less than 1 mm for chip-to-chip optical interconnects to over 1 km for local area network (LAN) systems. As a high-speed optical receiver for these systems, monolithic OEICs are very attractive because of their potential for high-speed operation, compactness, and cost reduction. In this paper, we will review the theoretical speed limit of MSM (Metal-Semiconductor-Metal) photodetector. 3-dB bandwidth of 50x50 um2 MSM detector will be studied. The recent progress on the 100 GHz MESFET (Metal Semiconductor Field Effect Transistor), InP HFET (Heterojunction Field Effect Transistor) and their OEIC receivers are also presented.

Citation Download Citation

Jinghui Mu and Milton Feng "100-GHz low-noise MESFET, HFET, and MSM technology for 10-Gb/s OEIC applications", Proc. SPIE 3795, Terahertz and Gigahertz Photonics, (12 November 1999); https://doi.org/10.1117/12.370204

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