Contacts to GaAs, InP, and GaP for high-temperature and high-power applications

Paul Piawong Lee; R. Jennifer Hwu; Laurence P. Sadwick; B. R. Kumar; Jehn-Huar Howard Chern; C. H. Lin; H. Balasubramaniam

doi:10.1117/12.370167

12 November 1999 Contacts to GaAs, InP, and GaP for high-temperature and high-power applications

Paul Piawong Lee, R. Jennifer Hwu, Laurence P. Sadwick, B. R. Kumar, Jehn-Huar Howard Chern, C. H. Lin, H. Balasubramaniam

Author Affiliations +

Proceedings Volume 3795, Terahertz and Gigahertz Photonics; (1999) https://doi.org/10.1117/12.370167
Event: SPIE's International Symposium on Optical Science, Engineering, and Instrumentation, 1999, Denver, CO, United States

Abstract

There is a significant interest in the area of improving high temperature stable contacts to III-V semiconductors. Two attractive materials that offer promise in this area are dysprosium phosphide (DyP) and dysprosium arsenide (DyAs). This paper reports the electrical characterization of MBE- grown DyP and DyAs on GaAs, GaP, and InP substrates. The characterization methods include Hall and I-V measurements. DyP is lattice matched to GaAs, with a room temperature mismatch of less than 0.01% and is stable in air with no sign of oxidation, even after months of ambient exposure. DyP forms Schottky contacts to n-GaAs, n- and p-GaP, and p- InP with barrier heights of 0.81, 0.9, 0.8 and 0.74 eV, respectively. DyP on n-InP and p-GaAs is found to have ohmic behavior with the specific contact resistance of 1 X 10^-4 and 2.9 X 10^-5 (Omega) (DOT)cm², respectively. DyAs also forms Schottky contacts to n-GaAs, p-InP and forms ohmic contacts to n-InP.

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Paul Piawong Lee, R. Jennifer Hwu, Laurence P. Sadwick, B. R. Kumar, Jehn-Huar Howard Chern, C. H. Lin, and H. Balasubramaniam "Contacts to GaAs, InP, and GaP for high-temperature and high-power applications", Proc. SPIE 3795, Terahertz and Gigahertz Photonics, (12 November 1999); https://doi.org/10.1117/12.370167

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