Paper
30 November 1999 Comparison and analysis on measurement of optical parameters of some semiconductor films by two methods
Jing Li, Fuxi Gan
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Abstract
The optical parameters of GeTe and Ge2Sb2Te5 semiconductor films by thermal treatment have been measured carefully by using a new method. A compared study by means of using a spectrum ellipsometer is presented. The optical parameters of the sample films are precisely obtained through the processes of data simulation and correction of the old calculation model. In the meantime, the data calculations of the same samples measured by a spectrum ellipsometer are given, and the complex refractive index curves of them in the spectrum range from 250 nm to 830 nm are obtained.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jing Li and Fuxi Gan "Comparison and analysis on measurement of optical parameters of some semiconductor films by two methods", Proc. SPIE 3806, Recent Advances in Metrology, Characterization, and Standards for Optical Digital Data Disks, (30 November 1999); https://doi.org/10.1117/12.371158
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KEYWORDS
Ferroelectric materials

Refractive index

Reflectivity

Optical testing

Thin films

Temperature metrology

Semiconductors

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