Paper
8 September 1999 Fabrication of Au/PZT/BIT/Si heterostructure by pulsed-laser deposition
Jun Yu, Xiaoming Dong, Wen-li Zhou, Yun-bo Wang, You-qing Wang, Yuankai Zheng, Hua Wang, Ji-fan Xie, Gang Liu
Author Affiliations +
Proceedings Volume 3862, 1999 International Conference on Industrial Lasers; (1999) https://doi.org/10.1117/12.361192
Event: International Symposium on Industrial Lasers, 1999, Wuhan, China
Abstract
The MFS heterostructures with structure of Au/PZT/p-Si and Au/PZT/BIT/p-Si were fabricated using pulsed laser deposition technique. The PZT ferroelectric thin films were deposited directly on Si or with a BIT buffer layer. P-E hysteresis loop, capacitance-voltage characteristics and current-voltage characteristics of the heterostructures were measured respectively. The results are performed and discussed.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jun Yu, Xiaoming Dong, Wen-li Zhou, Yun-bo Wang, You-qing Wang, Yuankai Zheng, Hua Wang, Ji-fan Xie, and Gang Liu "Fabrication of Au/PZT/BIT/Si heterostructure by pulsed-laser deposition", Proc. SPIE 3862, 1999 International Conference on Industrial Lasers, (8 September 1999); https://doi.org/10.1117/12.361192
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KEYWORDS
Heterojunctions

Ferroelectric materials

Thin films

Silicon

Pulsed laser deposition

Polarization

Scanning electron microscopy

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