Paper
3 September 1999 Fabrication of a full metal AFM probe and its applications for Si and InP device analysis
Thomas Hantschel, Thomas Trenkler, Mingwei Xu, Wilfried Vandervorst
Author Affiliations +
Proceedings Volume 3875, Materials and Device Characterization in Micromachining II; (1999) https://doi.org/10.1117/12.360457
Event: Symposium on Micromachining and Microfabrication, 1999, Santa Clara, CA, United States
Abstract
Pyramidal metal tips which are fixed to a silicon cantilever have proven to be very powerful probe tips in electrical Atomic Force Microscopy (AFM). Although silicon is currently the cantilever material of choice for most applications, solid metal cantilevers are an interesting alternative due to their higher electrical conductivity and a more simplified fabrication procedure. Therefore, we have developed a process scheme for such full metal probes and evaluated them in AFM. This paper discusses the fabrication scheme in detail and presents first results concerning the application of the fabricated probes for semiconductor device analysis. Our experiments clearly show that operational full metal probes can be made on a large scale in a 150 mm silicon wafer technology. Using the optimized process, full metal probes can be fabricated which can compete in contact-mode AFM with pyramidal metal tips fixed to a silicon cantilever. Our work is currently focussing on further improvement of batch reproducibility.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Thomas Hantschel, Thomas Trenkler, Mingwei Xu, and Wilfried Vandervorst "Fabrication of a full metal AFM probe and its applications for Si and InP device analysis", Proc. SPIE 3875, Materials and Device Characterization in Micromachining II, (3 September 1999); https://doi.org/10.1117/12.360457
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Cited by 4 scholarly publications and 1 patent.
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KEYWORDS
Metals

Silicon

Atomic force microscopy

Semiconducting wafers

Nickel

Plating

Particle filters

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