Influence of semiconductor structure inhomogeneity on electrophysical measurement results

Volodymyr G. Savitsky; Andrii P. Vlasov; Alexey V. Nemolovsky; Bogdan S. Sokolovsky

doi:10.1117/12.368378

4 November 1999 Influence of semiconductor structure inhomogeneity on electrophysical measurement results

Volodymyr G. Savitsky, Andrii P. Vlasov, Alexey V. Nemolovsky, Bogdan S. Sokolovsky

Proceedings Volume 3890, Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics; (1999) https://doi.org/10.1117/12.368378
Event: Material Science and Material Properties for Infrared Optoelectronics, 1998, Kiev, Ukraine

Abstract

By means of computer modeling and numerical analysis it has been shown that redistribution of charge carriers in non- homogeneous semiconductor structures has significant contribution to the Hall effect and conductivity of these samples and produce incorrect data when electrophysical measurements are used for determining the semiconductor layer parameters. For semiconductor structures on the basis of HgCdTe solid alloys this effect may manifest in the case of narrow gap layer with p-conductivity on the n-type wide gap base. Such structures are of interest for manufacturing IR photodetectors.SO for their characterization the differential Hall and conductivity method should be used with great caution.

Citation Download Citation

Volodymyr G. Savitsky, Andrii P. Vlasov, Alexey V. Nemolovsky, and Bogdan S. Sokolovsky "Influence of semiconductor structure inhomogeneity on electrophysical measurement results", Proc. SPIE 3890, Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (4 November 1999); https://doi.org/10.1117/12.368378

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