Thermodiffusion in Si-X-Ge33As12Se55 (X:Sb,Bi) interface

N. I. Dovgoshej; O. B. Kondrat; T. N. Shchurova; Nicolai D. Savchenko

doi:10.1117/12.368410

4 November 1999 Thermodiffusion in Si-X-Ge₃₃As₁₂Se₅₅ (X:Sb,Bi) interface

N. I. Dovgoshej, O. B. Kondrat, T. N. Shchurova, Nicolai D. Savchenko

Proceedings Volume 3890, Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics; (1999) https://doi.org/10.1117/12.368410
Event: Material Science and Material Properties for Infrared Optoelectronics, 1998, Kiev, Ukraine

Abstract

Thin films of 1,000-nm thickness were deposited from Ge₃₃As₁₂Se₅₅ glass by flash evaporation onto n-Si substances coated with thermally evaporated antimony or bismuth layer of 10-nm thickness. Thermal annealing of the structure has been conducted at a temperature of 450 K during 90 minutes. The main parameters of the thermodiffusion processes have been determined by the capacitor-voltage characteristics. Energy bands discontinuity on the n-Si-X-Ge₃₃As₁₂Se₅₅ interface after thermodiffusion of antimony and bismuth atoms have been found to be for the conduction band 0.61 and 0.86 eV, and for the valence band 0.08 and 0.17 eV, respectively. The diffusion in Ge₃₃As₁₂Se₅₅ film for antimony atom differs from that for the bismuth ones. It has been found that the diffusion processes were more intensive for antimony atoms and both types of the impurity atom exhibited nonuniform profiles. The diffusion coefficients for antimony and bismuth atoms in the near- surface layer of Ge₃₃As₁₂Se₅₅ film have been found to be respectively, 2.1 X 10^-14 and 2.3 X 10^-15 cm²/s. Inside the film the coefficients are 3.0 X 10^-14 and 1.2 X 10^-13 cm²/s. The higher intensity of the diffusion for antimony atoms has been related to the lower values for their atomic radii.

Citation Download Citation

N. I. Dovgoshej, O. B. Kondrat, T. N. Shchurova, and Nicolai D. Savchenko "Thermodiffusion in Si-X-Ge₃₃As₁₂Se₅₅ (X:Sb,Bi) interface", Proc. SPIE 3890, Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (4 November 1999); https://doi.org/10.1117/12.368410

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