Paper
12 November 1999 Intracavity piezoelectric InGaAs/GaAs laser modulator
John P. R. David, E. A. Khoo, Arbinder S. Pabla, Jon Woodhead, R. Grey, Graham J. Rees
Author Affiliations +
Proceedings Volume 3896, Design, Fabrication, and Characterization of Photonic Devices; (1999) https://doi.org/10.1117/12.370303
Event: International Symposium on Photonics and Applications, 1999, Singapore, Singapore
Abstract
Integration of a laser and modulator is shown to be possible in the InGaAs/AlGaAs material system by growing on a B GaAs substrate and utilizing the piezoelectric effect. The absorption characteristics of the modulator section are initially red shifted due to the built-in piezoelectric field and can be easily blue shifted with applied reverse bias. Since even under lasing conditions there is found to be a significant residual piezoelectric field in the quantum well, the modulator can be biased to a shorter wavelength than the lasing emission. Utilizing these effects a simple two-section laser-modulator device in which the absorber section lies within the laser cavity has been fabricated. The result show that the threshold current of the laser- modulator structure is controlled by the reverse bias voltage and hence absorption in the modulator section.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
John P. R. David, E. A. Khoo, Arbinder S. Pabla, Jon Woodhead, R. Grey, and Graham J. Rees "Intracavity piezoelectric InGaAs/GaAs laser modulator", Proc. SPIE 3896, Design, Fabrication, and Characterization of Photonic Devices, (12 November 1999); https://doi.org/10.1117/12.370303
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KEYWORDS
Absorption

Modulators

Quantum wells

Gallium arsenide

Laser damage threshold

Modulation

Semiconductor lasers

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