Paper
14 July 2000 Simulation of spontaneous emission in apertured microcavities
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Abstract
It has been established both theoretically and experimentally that semiconductor microcavities are capable of modifying the spontaneous emission rate of electron-hole pairs within the microcavity. In particular, the microcavity may be used to re- shape the spectral distribution of radiation from a dipole source in order to enhance emission at certain frequencies and suppress emission other frequencies. It is desirable to exploit this effect to increase the efficiency of LEDs and SLDs. Numerical calculation may be used to evaluate the magnitude of the modification of spontaneous emission in practical microcavity structures. The Green's function based VCSEL mode solver we have developed is uniquely well-suited for such calculations. The method we have employed for calculating spontaneous emission rates in microcavities is presented, along with calculated results and comparisons with experimental data.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Benjamin Daniel Klein, Karl Hess, and Dennis G. Deppe "Simulation of spontaneous emission in apertured microcavities", Proc. SPIE 3944, Physics and Simulation of Optoelectronic Devices VIII, (14 July 2000); https://doi.org/10.1117/12.391428
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Cited by 1 scholarly publication.
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KEYWORDS
Optical microcavities

Oxides

Vertical cavity surface emitting lasers

Light emitting diodes

Mirrors

Quantum dots

Semiconductors

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